高压场效应管（100-800V）

The WSF70N10G uses advanced SGT-II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. • advanced SGTMOS technology Super Low Gate Charge\n• Low RDS(ON);

Winsok

微硕半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：679.88 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

N-Channel Enhancement Mode Field Effect Transistor

文件：697.38 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

Fast Switching Speed

文件：49.14 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 69A, RDS(ON) = 11mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V

文件：533.29 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 69A, RDS(ON) = 11mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V

文件：533.29 Kbytes 页数：5 Pages

CET-MOS

华瑞