零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
WSF30P06 | P-Ch MOSFET | WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd 微硕半岛体深圳市龍華區大浪街道高峰社區忠信路9號匯億大廈807 | WIINSOK | |
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
P-Channel60-V(D-S)MOSFET | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | BWTECH | ||
TMOSPOWERFET30AMPERES60VOLTS TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
P-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
PowerMOSFET30Amps,60VoltsP-ChannelD2PAK ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET30AMPERES60VOLTS TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerMOSFET30Amps,60VoltsP?묬hannelD2PAK | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET30Amps,60VoltsP?묬hannelD2PAK | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET30Amps,60VoltsP-ChannelD2PAK ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET30Amps,60VoltsP-ChannelD2PAK ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
P?묬hannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
P?묬hannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NCEP-ChannelEnhancementModePowerMOSFET Description TheNCE30P06Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-30V,ID=-6.5A RDS(ON | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
30A,60V,0.065Ohm,P-ChannelPowerMOSFETs TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyaredesignedforuseinapplicationssuchasswitchingregulators,sw | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
30A,60V,0.065Ohm,P-ChannelPowerMOSFETs TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyaredesignedforuseinapplicationssuchasswitchingregulators,sw | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
WINSOK/微硕 |
23+ |
TO-252-3 |
15800 |
新到现货,只有原装 |
询价 | ||
WINSOK |
24+25+/26+27+ |
TO-252-3 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
WINSOK(微硕) |
23+ |
TO2523 |
6000 |
诚信服务,绝对原装原盘 |
询价 | ||
23+ |
N/A |
75000 |
一级代理放心采购 |
询价 | |||
WINSOK |
2022+ |
TO-252 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
WINSOK |
2022+ |
TO-252 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
WINSOK |
2021+ |
TO252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
WINSOK |
23+ |
TO-252-4L |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
WINSOK |
TO-252-4 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
WINSOK |
2022+ |
TO-252-4 |
79999 |
询价 |
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