MTM25N10

POWERFIELDEFFECTTRANSISTOR

MTM25N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP25N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NCEAP25N10AD

NCEAutomotiveN-ChannelSuperTrenchIIPowerMOSFET

Description TheNCEAP25N10ADusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfor

NCEAP25N10AG

NCEAutomotiveN-ChannelSuperTrenchIIPowerMOSFET

Description TheNCEAP25N10AGusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfor

NCEAP25N10AK

NCEAutomotiveN-ChannelSuperTrenchIIPowerMOSFET

Description TheNCEAP25N10AKusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfor

PJD25N10A

100VN-ChannelEnhancementModeMOSFET

PJD25N10A

100VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@15A

SID25N10-C

N-ChEnhancementModePowerMOSFET

SSD25N10

N-ChEnhancementModePowerMOSFET