JCS20N20FT-O-F-N-B

N-ChannelMOSFETusesadvancedtrenchtechnology

MTB20N20E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

MTB20N20E

N?묬hannelPowerMOSFET

MTB20N20E

TMOSPOWERFET20AMPERES200VOLTS

TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThisadvancedTMOSE–FETisdesignedtowithstandhigh

MTP20N20

TMOSPOWERFET20AMPERES200VOLTSRDS(on)=0.16OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowv

MTP20N20E

iscN-ChannelMOSFETTransistor

MTP20N20E

TMOSPOWERFET20AMPERES200VOLTSRDS(on)=0.16OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowv

MTP20N20E

N?묬hannelPowerMOSFET

SSFP20N20

StarMOSTPowerMOSFET

STD20N20

N-CHANNEL200V-0.10OHM-18ATO-220/TO-220FP/DPAKLOWGATECHARGESTripFETIIMOSFET

DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconverters. GeneralFeatures ■TYPICALRDS(