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WSE128K16-150G2TM中文资料WEDC数据手册PDF规格书
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WSE128K16-150G2TM规格书详情
FEATURES
■ Access Times of 35ns (SRAM) and 150ns (EEPROM)
■ Access Times of 45ns (SRAM) and 120ns (EEPROM)
■ Access Times of 70ns (SRAM) and 300ns (EEPROM)
■ Packaging
• 66 pin, PGA Type, 1.075 square HIP, Hermetic Ceramic HIP (H1) (Package 400)
• 68 lead, Hermetic CQFP (G2T), 22mm (0.880) square (Package 509). Designed to fi t JEDEC 68 lead 0.990 CQFJ footprint (FIGURE 2)
■ 128Kx16 SRAM
■ 128Kx16 EEPROM
■ Organized as 128Kx16 of SRAM and 128Kx16 of EEPROM Memory with separate Data Buses
■ Both blocks of memory are User Confi gurable as 256Kx8
■ Low Power CMOS
■ Commercial, Industrial and Military Temperature Ranges
■ TTL Compatible Inputs and Outputs
■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation
■ Weight - 13 grams typical
EEPROM MEMORY FEATURES
■ Write Endurance 10,000 Cycles
■ Data Retention at 25°C, 10 Years
■ Low Power CMOS Operation
■ Automatic Page Write Operation
■ Page Write Cycle Time 10ms Max.
■ Data Polling for End of Write Detection
■ Hardware and Software Data Protection
■ TTL Compatible Inputs and Outputs
产品属性
- 型号:
WSE128K16-150G2TM
- 制造商:
WEDC
- 制造商全称:
White Electronic Designs Corporation
- 功能描述:
128Kx16 SRAM/EEPROM MODULE