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CA3060

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

Intersil

Intersil Corporation

CA3060

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

HARRIS

Harris Corporation

CA3060E

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

Intersil

Intersil Corporation

CA3060E

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

HARRIS

Harris Corporation

CBD3060LCT

LOWVFSCHOTTKYRECTIFIER

PANJITPan Jit International Inc.

強茂強茂股份有限公司

CBRX3060CT

TrenchSchottkyBarrierRectifier

Good-Ark

GOOD-ARK Electronics

CC3060C-AZ

3-phase3-line500VACAvailable5-150AForoutputlineonly

SOSHINSoshin electric Co., Ltd.

双信电机双信电机株式会社

CEB3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,105A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

供应商型号品牌批号封装库存备注价格
WINSOK
24+
DFN3*3-8
9600
原装现货,优势供应,支持实单!
询价
WINSOK/微硕
23+
DFN3*3-8
50000
原装正品 支持实单
询价
24+
N/A
79000
一级代理-主营优势-实惠价格-不悔选择
询价
WINSOK微硕
25+
DFN3X3-8
188600
全新原厂原装正品现货 欢迎咨询
询价
WINSOK/微硕
23+
DFN3X3-8
5000
交期准时服务周到
询价
WINSOK/微硕
24+
DFN3*3-8
60000
全新原装现货
询价
WINSOK微硕
2447
DFN 3.3x3.3-8
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
WINSOK
2022+
DFN33
50000
原厂代理 终端免费提供样品
询价
WINSOK
23+
DFN3X3-8
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
WINSOK微硕
23+
DFN3.3x3.3B-8
22820
原装正品,支持实单
询价
更多WSD3060DN供应商 更新时间2025-5-9 15:16:00