首页 >WS30P10SMB-AT>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
WS30P10SMB-AT | Automotive Level 1000W TVS | Wayon 维安 | Wayon | |
P-C hannel Enhancement Mode Field Effect Transistor 文件：741.98 Kbytes 页数：5 Pages | YANGJIE 扬杰电子 | YANGJIE | ||
P-Channel Enhancement Mode Field Effect Transistor 文件：739.45 Kbytes 页数：6 Pages | YANGJIE 扬杰电子 | YANGJIE | ||
P-Channel 100 V (D-S) MOSFET 文件：993.08 Kbytes 页数：9 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
P-Channel Logic Level Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● Reliable and Rugged ● 100% EAS Guaranteed 文件：881.13 Kbytes 页数：6 Pages | ADV 爱德微 | ADV | ||
P-Channel Logic Level Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● Reliable and Rugged ● 100% EAS Guaranteed 文件：863.04 Kbytes 页数：6 Pages | ADV 爱德微 | ADV |
技术参数
- Package：
SMB
- Peak Pulse Power Ppp(W)：
1000
- Reverse Stand off Voltage VRWM(V)：
30
- MIN VBR (Volts)@IT：
33.30
- MAX VBR (Volts)@IT：
36.80
- Test Current IT(mA)：
1.0
- Maximum Clamping Voltage Vc@Ipp(V)：
48.4
- Maximum Peak Pulse Current Ipp(A)：
20.66
- Maximum Reverse Leakage IR @VRWM(μA)：
1.0
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WAYON |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 | ||
WAY-ON(维安) |
23+ |
DO-214AC |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
WAYON/维安 |
23+ |
NA |
6800 |
原装正品,力挺实单 |
询价 | ||
WINSEMI |
23+ |
SOP8 |
12000 |
原装正品假一罚百!可开增票! |
询价 | ||
WINSEMI |
23+ |
SOP-8 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
WINSEMI |
22+ |
SOP8 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
WS |
6000 |
面议 |
19 |
TO-92 |
询价 | ||
Winslow |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
WS |
25+23+ |
TO-92 |
24669 |
绝对原装正品全新进口深圳现货 |
询价 |
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