SLVU2.8-4

LowCapacitanceTVSDiodeArray

FEATURES ◆400WattsPeakPulsePowerperLine(tp=8/20µs) ◆Protectstwolinepairs(fourlines) ◆Lowcapacitance ◆RoHSCompliant APPLICATIONS ◆10/100/1000Ethernet ◆WAN/LANEquipment ◆Test&MeasurementEquipment ◆SwitchingSystems ◆Instrumentation ◆Audio/VideoInputs

SLVU2.8-4

2.8VTVSArrayForESDandLatch-UpProtection

SLVU2.8-4.T

EPDTVSDiodeArrayForESDandLatch-UpProtection

Description TheSLVseriesoftransientvoltagesuppressorsaredesignedtoprotectlowvoltage,state-of-the-artCMOSsemiconductorsfromtransientscausedbyelectrostaticdischarge(ESD),cabledischargeevents(CDE),lightningandotherinducedvoltagesurges. Thedevicesareconstructedusi

SLVU2.8-4.TB

EPDTVSDiodeArrayForESDandLatch-UpProtection

Description TheSLVseriesoftransientvoltagesuppressorsaredesignedtoprotectlowvoltage,state-of-the-artCMOSsemiconductorsfromtransientscausedbyelectrostaticdischarge(ESD),cabledischargeevents(CDE),lightningandotherinducedvoltagesurges. Thedevicesareconstructedusi

SLVU2.8-4.TBT

EPDTVSDiodeArrayForESDandLatch-UpProtection

Description TheSLVseriesoftransientvoltagesuppressorsaredesignedtoprotectlowvoltage,state-of-the-artCMOSsemiconductorsfromtransientscausedbyelectrostaticdischarge(ESD),cabledischargeevents(CDE),lightningandotherinducedvoltagesurges. Thedevicesareconstructedusi

SLVU2.8-4.TBT

EPDTVSDiodeArrayForESDandLatch-UpProtection

Description TheSLVseriesoftransientvoltagesuppressorsaredesignedtoprotectlowvoltage,state-of-the-artCMOSsemiconductorsfromtransientscausedbyelectrostaticdischarge(ESD),cabledischargeevents(CDE),lightningandotherinducedvoltagesurges. Thedevicesareconstructedusi

SLVU2.8-4.TBT

Tiva??CSeriesTM4C1294ConnectedLaunchPadEvaluationKit

SLVU2.8-4.TBT

TVSArrayForESDandLatchUpProtection

Features ●100Wpeakpulsepower(8/20μs) ●Protectstwolinepairs(fourlines) ●Ultralowleakage:nAlevel ●Lowoperatingvoltage:2.8V ●Lowcapacitance ●Ultralowclampingvoltage ●JEDECSO-8package ●Complieswithfollowingstandards: -IEC61000-4-2(ESD)immunitytest Airdis

SLVU2.8-4.TBT

2.8VTVSArrayForESDandLatch-UpProtection

flowthroughdesignmakestheSLVU2.8-4.TBT contactdischarge.TheSLVU2.8-4.TBTisassembled SLVU2.8-4 TheSLVU2.8-4.TBT Description isdesignedtoprotectlow voltage,CMOSsemiconductorsfromtransients causedbyelectrostaticdischarge(ESD),cable dischargeevents(CDE),lightningandoth

SLVU2.8-4BTG

TVSArrayForESDandLatchUpProtection

Features #300Wpeakpulsepower(8/20p1s) Protectstwolinepairs(fourlines) #Ultralowleakage:nAlevel #Lowoperatingvoltage:2.8V ®Lowcapacitance 4Ultralowclampingvoltage #JEDECSO-8package #Complieswithfollowingstandards: ~IEC61000-4-2(ESD)immunitytest Aird