EPD TVS Diode Array For ESD and Latch-Up Protection

Description The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The devices are constructed usi

文件：201.67 Kbytes 页数：9 Pages

SEMTECH

先之科

EPD TVS Diode Array For ESD and Latch-Up Protection

Description The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The devices are constructed usi

文件：201.67 Kbytes 页数：9 Pages

SEMTECH

先之科

EPD TVS Diode Array For ESD and Latch-Up Protection

Description The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The devices are constructed usi

文件：204.88 Kbytes 页数：9 Pages

SAMTEC

美国申泰

EPD TVS Diode Array For ESD and Latch-Up Protection

Description The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The devices are constructed usi

文件：201.67 Kbytes 页数：9 Pages

SEMTECH

先之科

丝印：SLVU2.8-4；Package：SOP-8；2.8V TVS Array For ESD and Latch-Up Protection

flow through design makes the SLVU2.8-4.TBT contact discharge. The SLVU2.8-4.TBT is assembled SLVU2.8-4 The SLVU2.8-4.TBT Description is designed to protect low voltage,CMOS semiconductors from transients caused by electrostatic discharge(ESD),cable discharge events(CDE), lightning and oth

文件：469.53 Kbytes 页数：4 Pages

UMW

友台半导体

TVS Array For ESD and Latch Up Protection

Features ● 100W peak pulse power(8/20μs) ● Protects two line pairs(four lines) ● Ultra low leakage: nA level ● Low operating voltage: 2.8V ●Low capacitance ● Ultra low clamping voltage ● JEDEC SO-8 package ● Complies with following standards: - IEC 61000-4-2 (ESD) immunity test Air dis

文件：6.66701 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

Tiva??C Series TM4C1294 Connected LaunchPad Evaluation Kit

文件：853.32 Kbytes 页数：42 Pages

TI

德州仪器

Package：8-SOIC（0.154"，3.90mm 宽）；包装：剪切带（CT）带盒（TB） 类别：电路保护 TVS - 二极管 描述：SOP-8

UTD Semiconductor

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT） 类别：电路保护 TVS - 二极管 描述：TVS DIODE 2.8VWM 15VC 8-SO

Semtech Corporation