| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU454usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU454isPb-free(meetsROHS&Sony259specifications).AOU4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel40V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PowerSupply -SecondarySynchronousRectification •DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU454usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU454isPb-free(meetsROHS&Sony259specifications).AOU4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下电器松下电器机电(中国)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下电器松下电器机电(中国)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下电器松下电器机电(中国)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下电器松下电器机电(中国)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下电器松下电器机电(中国)有限公司 | NAIS |
详细参数
- 型号：
WP454C
- 制造商：
Black Box Corporation
- 功能描述：
GIGASTATION PLUS WALLPLATSNG GANG, 1 PORT IVORY
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VICOR |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
WATTELECTRON |
23+ |
65480 |
询价 | ||||
24+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
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