SS32_V01

20V-200V3.0A

Features PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Forsurfacemountapplications Lowpowerloss,highefficiency Highcurrentcapability,Lowforwardvoltagedrop Lowprofilepackage built-instrainre

SS32_V01

Surface-MountSchottkyBarrierRectifier

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highsurgecapability •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Auto

SS32_V01

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

SS32_V01

SurfaceMountSchottkyBarrierRecitifiers

SS32_V01

SurfaceMountSchottkyBarrierRectifier

SS32_V01

SCHOTTKYBARRIERRECTIFIER

Features ·Lowprofilepackage ·Lowpowerlosses,highefficiency ·Lowforwardvoltagedrop ·Highsurgecapability ·Hightemperaturesoldering： 260℃/10secondsatterminals ·Componentinaccordance RoHS2011/65/EUandWEEE2002/96/EC

STBV32_V01

Highvoltagefast-switchingNPNpowertransistor

Features ■Highvoltagecapability ■Lowspreadofdynamicparameters ■Minimumlot-to-lotspreadforreliableoperation ■Veryhighswitchingspeed Applications ■Compactfluorescentlamps(CFLS) ■SMPSforbatterycharger Description Thedeviceismanufacturedusinghighvoltage mu

STM32_V01

Leading-edgearchitecturewithCortex-M3core

■Harvardarchitecture ■1.25DMIPS/MHzand0.19mW/MHz ■Thumb-2instructionsetbrings32-bitperformance with16-bitcodedensity ■Singlecyclemultiplyandhardwaredivision ■Embedded,fastinterruptcontrollerisnowinsidethe coreallowing: ■Excellentreal-timebehaviour ■Lowla

STPM32_V01

ASSPformeteringapplicationswithuptofourindependent24-bit2ndordersigma-deltaADCs,4MHzOSFand2embeddedPGLNA

Features Activepoweraccuracy: –

SX32_V01

3.0ASURFACEMOUNTSCHOTTKYBARRIERDIODE

LowForwardVoltage EpitaxialConstructionwithOxidePassivation GuardRingforTransientandESDProtection SurgeOverloadRatingto80APeak LowPowerLoss FastSwitching IdeallySuitedforUseinHighFrequency SMPS,InvertersandAsFreeWheelingDiodes