Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz

The WGC22630 is a 630 W (P4dB) GaN-on-Silicon Carbide HEMT Amplifier designed for use in multi-standard cellular power amplifier applications. It features optimized operation from 2110 - 2200 MHz and a thermally-enhanced over-molded plastic package.  ·GaN-on-SiC HEMT Technology\n·Pulsed CW Performance: 2155 MHz, 48 V, 40 µs Pulse Width, 10% Duty Cycle, Combined Outputs\n·Output Power @ P4dB = 630 W\n·Efficiency @ P4dB = 68%\n·RoHS* Compliant ;

MACOM

Metallized Polypropylene Film Capacitor

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QFN28

INTEL

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上传：深圳市乐创天科技有限公司

QFN64

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上传：齐创科技(上海,北京,青岛)有限公司