平面型功能场效应管

WildGoose

威谷

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：623.42 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：635.87 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamicdv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Low Trr and Soft Diode Recovery ● High Performance Optimised Anti-parallel Diode Applications

文件：111.42 Kbytes 页数：8 Pages

IRF