AC / DC Sensing Current Module with Digital Data output

Feature  O perating voltage DC5.0V  0.4 mΩ internal conductor resistance  S ensing current range : AC : 0~ 20 A 50Hz, 60Hz) DC : 0~ 25 A  High accuracy : AC : (0~6 A) 60 mA (6~20 A) 1 DC : ±±(0~6 A) 60 mA ± ±(6~25 A) 1  High resolution : AC / DC : 18 mA  UART d igital dat

文件：911.03 Kbytes 页数：6 Pages

DIWELL

AC / DC Sensing Current Module with Digital Data output

Feature  O perating voltage DC5.0V  98 mΩ internal conductor resistance  S ensing current range AC : 0~0.5 A 50Hz, 60Hz) DC : 0~ 0.7A  High accuracy : AC : (0~ 2mA (0.2~0.5A) 1 DC : ±±(0~ 2mA ± ±(0.2~ 1  High resolution : AC / DC : 0.6mA  UART d igital data output Baud Rar

文件：882.97 Kbytes 页数：6 Pages

DIWELL

128K x 16 Static RAM

Functional Description The WCMB2016R4X is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. Features • Low voltage range: — 1.65V−1.95V • Ultra-low active power — Typical Activ

文件：214.24 Kbytes 页数：11 Pages

Weida

128K x 16 Static RAM

Functional Description The WCMB2016R4X is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. Features • Low voltage range: — 1.65V−1.95V • Ultra-low active power — Typical Activ

文件：214.24 Kbytes 页数：11 Pages

Weida

1Mb x 16 Pseudo Static RAM

Functional Description[1] The WCMC1616V9X is a high-performance CMOS pseudo static RAMs (PSRAM) organized as 1M words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Batte

文件：217.45 Kbytes 页数：13 Pages

Weida

1Mb x 16 Pseudo Static RAM

Functional Description[1] The WCMC1616V9X is a high-performance CMOS pseudo static RAMs (PSRAM) organized as 1M words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Batte

文件：217.45 Kbytes 页数：13 Pages

Weida

8Mb (512K x 16) Pseudo Static RAM

Functional Description[1] The WCMC8016V9X is a high-performance CMOS pseudo static RAM organized as 512K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life

文件：219.36 Kbytes 页数：12 Pages

Weida

8Mb (512K x 16) Pseudo Static RAM

Functional Description[1] The WCMC8016V9X is a high-performance CMOS pseudo static RAM organized as 512K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life

文件：219.36 Kbytes 页数：12 Pages

Weida

rohs compliant

文件：4.19256 Mbytes 页数：30 Pages

TAOGLAS

2400MHz to 2500MHz Antenna

文件：4.17813 Mbytes 页数：30 Pages

TAOGLAS