WCMC8016V9X中文资料WEIDA数据手册PDF规格书

Functional Description[1]

The WCMC8016V9X is a high-performance CMOS pseudo static RAM organized as 512K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life® (MoBL®) in portable applications such as cellular telephones.

Features

• Wide voltage range: 2.70V–3.30V

• Access Time: 70ns

• Ultra-low active power

— Typical active current: 2.0mA @ f = 1 MHz

— Typical active current: 11mA @ f = fmax

• Ultra low standby power

• Easy memory expansion with CE, CE2, and OE features

• Automatic power-down when deselected

• CMOS for optimum speed/power

• Offered in a 48 Ball BGA Package