W988D6FBGX

低功耗单存取同步动态随机存取内存(Low Power SDR SDRAM); •Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V \n• Data width: x16 \n• Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz \n• Standard Self Refresh Mode \n• PASR、ATCSR、Power Down Mode、DPD \n• Programmable output buffer driver strength \n• Four internal banks for concurrent operation \n• CAS Latency: 2 and 3 \n• Burst Length: 1、2、4 、8 and full page \n• Operating Temperature Range: Extended (-25°C ~ 85°C), Industrial (-40°C ~ 85°C) \n• Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver\n• Package:54VFBGA;

This is a 256Mb Low Power SDR SDRAM organized as 4M words x 4 banks x 16bits\n

W988D6FBGX6E

256Mb Mobile LPSDR

W988D6FBGX6E

256Mb Mobile LPSDR

W988D6FBGX6E-TR

256Mb Mobile LPSDR

W988D6FBGX6I

256Mb Mobile LPSDR

W988D6FBGX6I

256Mb Mobile LPSDR

W988D6FBGX7E

256Mb Mobile LPSDR

W988D6FBGX7E

256Mb Mobile LPSDR

W988D6FBGX7G

256Mb Mobile LPSDR

W988D6FBGX7G

256Mb Mobile LPSDR