丝印：W5；Package：SOT-23；350mW SURFACE MOUNT ZENER DIODE

Planar Die Construction 350mW Power Dissipation 2.4V – 51V Nominal Zener Voltage 2% Standard Vz Tolerance Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-0

文件：60.47 Kbytes 页数：5 Pages

WTE

Won-Top Electronics

丝印：W5；Package：SOT-23；350mW SURFACE MOUNT ZENER DIODE

Planar Die Construction 350mW Power Dissipation 2.4V – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-0

文件：60.51 Kbytes 页数：5 Pages

WTE

Won-Top Electronics

丝印：W5；Package：SOT-23；SURFACE MOUNT SILICON ZENER DIODES

SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4~75V • Ideally Suited for Automated Assembly Processes • Acqire quality system certificate : TS16949 • AEC-Q10

文件：292.47 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：W5；Package：SOT-323；200mW SURFACE MOUNT ZENER DIODE

Planar Die Construction 200mW Power Dissipation 2.4V – 51V Nominal Zener Voltage 5 Standard Vz Tolerance Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-0

文件：60.68 Kbytes 页数：5 Pages

WTE

Won-Top Electronics

丝印：W5；Package：SOD-123；SILICON PLANAR ZENER DIODES

Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5%

文件：961.74 Kbytes 页数：5 Pages

SY

顺烨电子

丝印：W5；Package：SOD-123；SILICON PLANAR ZENER DIODES

Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5%

文件：1.11219 Mbytes 页数：5 Pages

SY

顺烨电子

丝印：W5；Package：SOD-123；SILICON PLANAR ZENER DIODES

Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5%

文件：962.46 Kbytes 页数：5 Pages

SY

顺烨电子

丝印：W5；Package：SOT23；500 V, 0.25 A PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability I

文件：285.35 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：W5；Package：SOT23；500 V, 0.25 A PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T-Q. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability

文件：268.58 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：W5；Package：SOT-89；TLVH431, TLVH432 Low-Voltage Adjustable Precision Shunt Regulators

1 Features • Low-voltage operation: down to 1.24V • Reference voltage tolerances at 25°C – 0.5% for B grade – 1% for A grade – 1.5% for standard grade • Adjustable output voltage, VO = VREF to 18V • Wide operating cathode current range: 100μA to 70mA • 0.25Ω typical output imp

文件：2.09357 Mbytes 页数：54 Pages

TI

德州仪器