744877004

Marking：W4R7；WE-DD SMT Shielded Coupled Inductor

GeneralProperties: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

744878004

Marking：W4R7；WE-DD SMT Shielded Coupled Inductor

GeneralProperties: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

744878470

Marking：W470；WE-DD SMT Shielded Coupled Inductor

GeneralProperties: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

CMSZDA2V7

Marking：W4W；Package：SOT-323；SURFACE MOUNT DUAL, SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS

DESCRIPTION: TheCENTRALSEMICONDUCTORCMSZDA2V4Seriessilicondualzenerdiodeisahighlyqualityvoltageregulator,connectedinacommonanodeconfiguration,foruseinindustrial,commercial,entertainmentandcomputerapplications.

KAQW414H

Marking：W414H；Package：DIP-8；SOLID STATE RELAY - MOSFET OUTPUT

SOLIDSTATERELAY-MOSFETOUTPUT

PJW4N06A_R2_00001

Marking：W4N06A；Package：SOT-223；60V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@3.0A

PJW4N06A-AU_R2_000A1

Marking：W4N06A；Package：SOT-223；60V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@3A

PJW4P06A_R2_00001

Marking：W4P06A；Package：SOT-223；60V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-4.0A

PJW4P06A-AU_R2_000A1

Marking：W4P06A；Package：SOT-223；60V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-4A

STW45NM60D

Marking：W45NM60D；Package：TO-247；N-channel 600 V, 0.09 Ω, 45 A TO-247 FDmesh™ Power MOSFET (with fast diode)

Features ■Highdv/dtandavalanchecapabilities ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications Description TheFDmesh™associatesalladvantagesof reducedon-resistanceandfastswitchingwithan intri