W29EE512P-70B中文资料华邦电子数据手册PDF规格书

GENERAL DESCRIPTION

The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE512 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.

FEATURES

● Single 5-volt program and erase operations

● Fast page-write operations

- 128 bytes per page

- Page program cycle: 10 mS (max.)

- Effective byte-program cycle time: 39 mS

- Optional software-protected data write

● Fast chip-erase operation: 50 mS

● Read access time: 70/90/120 nS

● Typical page program/erase cycles: 1K/10K

● Ten-year data retention

● Software and hardware data protection

● Low power consumption

- Active current: 50 mA (max.)

- Standby current: 100 mA (max.)

● Automatic program timing with internal VPP generation

● End of program detection

- Toggle bit

- Data polling

● Latched address and data

● TTL compatible I/O

● JEDEC standard byte-wide pinouts

● Available packages: 32-pin PLCC, TSOP and VSOP