W29EE011P-15中文资料华邦电子数据手册PDF规格书

GENERAL DESCRIPTION

The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase operations with extremely low current consumption (compared toother comparable 5-volt flash memory products).

FEATURES

Single 5-volt program and erase operations

Fast page-write operations

−128 bytes per page

−Page program cycle: 10 mS (max.)

−Effective byte-program cycle time: 39 µS

−Optional software-protected data write

Fast chip-erase operation: 50 mS

Read access time: 90/150 nS

Page program/erase cycles: 1K/10K

Ten-year data retention

Software and hardware data protection

Low power consumption

−Active current: 25 mA (typ.)

−Standby current: 20 µA (typ.)

Automatic program timing with internal VPPgeneration

End of program detection

−Toggle bit

−Data polling

Latched address and data

TTL compatible I/O

JEDEC standard byte-wide pinouts

Available packages: 32-pin 600 mil DIP, 32-pin TSOP (8 x 20 mm), 32-pin STSOP

(8 x 14 mm), 32-pin PLCC, and Lead-free 32-pin PLCC