W29EE012中文资料华邦电子数据手册PDF规格书

GENERAL DESCRIPTION

The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.

FEATURES

• Single 5-volt program and erase operations

• Fast page-write operations

- 128 bytes per page

- Page program cycle: 10 mS (max.)

- Effective byte-program cycle time: 39 μS

- Optional software-protected data write

• Fast chip-erase operation: 50 mS

• Page program/erase cycles: 1,000

• Ten-year data retention

• Software and hardware data protection

• Low power consumption

- Active current: 25 mA (typ.)

- Standby current: 20 μA (typ.)

• Automatic program timing with internal VPP generation

• End of program detection

- Toggle bit

- Data polling

• Latched address and data

• TTL compatible I/O

• JEDEC standard byte-wide pinouts