128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase o

文件：183.23 Kbytes 页数：20 Pages

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华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase o

文件：183.23 Kbytes 页数：20 Pages

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase o

文件：183.23 Kbytes 页数：20 Pages

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase o

文件：183.23 Kbytes 页数：20 Pages

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase o

文件：183.23 Kbytes 页数：20 Pages

WINBOND

华邦电子

5-Volt Flash

Winbond

华邦电子

Package：32-LCC（J 形引线）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC FLASH 1MBIT PARALLEL 32PLCC

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