128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase o

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WINBOND

华邦电子

128K x 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION\nThe W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of theW29EE011 results in fast program/erase oper ·  Single 5-volt program and erase operations\n·  Fast page-write operations\n   - 128 bytes per page\n   - Page program cycle: 10 mS (max.)\n   - Effective byte-program cycle time: 39 mS\n   - Optional software-protected data write\n·  Fast chip-erase operation: 50 mS\n·  Read access time: 90/150 n;

Winbond

华邦电子

TSOP48

WINBAND

上传：深圳市拓亿芯电子有限公司

TSOP48

Winbond/华邦

上传：深圳市羿芯诚电子有限公司