首页 >W25Q40EWSVIGTR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemory | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemory | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemory | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WinbondElectronics |
19+ |
8-VSOP |
26580 |
存储IC一手货源,极具优势! |
询价 | ||
Winbond Electronics |
21+ |
8-VSOP |
56200 |
一级代理/放心采购 |
询价 | ||
WINBOND |
20+ |
SOP-8 |
5000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
华邦 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
Winbond Electronics |
22+ |
8VSOP |
9000 |
原厂渠道,现货配单 |
询价 | ||
Winbond Electronics |
21+ |
8VSOP |
13880 |
公司只售原装,支持实单 |
询价 | ||
Winbond Electronics |
23+ |
8VSOP |
9000 |
原装正品，支持实单 |
询价 | ||
WINBOND |
24+25+/26+27+ |
8-VSOP |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
Winbond Electronics |
23+ |
8VSOP |
8000 |
只做原装现货 |
询价 | ||
WINBOND/华邦 |
2020+ |
TSSOP8 |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 |
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