8K X 8 CMOS STATIC RAM

文件：228.28 Kbytes 页数：10 Pages

WINBOND

华邦电子

8K X 8 CMOS STATIC RAM

文件：228.28 Kbytes 页数：10 Pages

WINBOND

华邦电子

Wirewound Power Resistor

文件：422.4 Kbytes 页数：3 Pages

BOURNS

伯恩斯

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.92094 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Vitreous enamelled wirewound resistor

TT Electronics

丝印：W24*；Package：SOT-26；1.5MHz, 1A Synchronous Buck Regulator

文件：518.15 Kbytes 页数：19 Pages

ANPEC

茂达电子

丝印：W24A；Package：SOT-23；Single N-Channel, 20V, 3.9A, Power MOSFET

文件：914.57 Kbytes 页数：6 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：W24A；Package：SOT-23；Single N-Channel, 20V, 3.9A, Power MOSFET

文件：914.57 Kbytes 页数：6 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

128K x 8 CMOS STATIC RAM

GENERAL DESCRIPTION\nThe W24100 is a normal-speed, very low-power CMOS static RAM organized as 131072 x 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.FEATURES\n· Low power consumption:\n   - Active: 385 mW (max.)\n· · Low power consumption:\n   - Active: 385 mW (max.)\n· Access time: 70 nS\n· Single 5V power supply\n· Fully static operation\n· All inputs and outputs directly TTL compatible\n· Three-state outputs\n· Battery back-up operation capability\n· Data retention voltage: 2V (min.)\n· Packaged in 32-pin 6;

Winbond

华邦电子

128K X 8 CMOS STATIC RAM

Winbond

华邦电子