Spread Spectrum Frequency Timing Generator

Overview The W155 incorporates the latest advances in PLL-based spread spectrum frequency synthesizer technology. By frequency modulating the SYSCLK output with a low-frequency carrier, peak EMI can be greatly reduced in a system. Use of this technique allows systems to pass increasingly difficul

文件：86.45 Kbytes 页数：6 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

Spread Spectrum System Frequency Synthesizer

Overview The W158 is designed to provide the essential frequency sources to work with advanced multiprocessing Intel architecture platforms. Split voltage supply signaling provides 2.5V and 3.3V clock frequencies operating up to 133 MHz. From a low-cost 14.31818-MHz reference crystal oscillator,

文件：166.07 Kbytes 页数：12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

Spread Spectrum System Frequency Synthesizer

Overview The W158 is designed to provide the essential frequency sources to work with advanced multiprocessing Intel architecture platforms. Split voltage supply signaling provides 2.5V and 3.3V clock frequencies operating up to 133 MHz. From a low-cost 14.31818-MHz reference crystal oscillator,

文件：219.93 Kbytes 页数：12 Pages

SPECTRALINEAR

Spread Spectrum System FTG for SMP Systems

Overview The W159 is designed to provide the essential frequency sources to work with advanced multiprocessing Intel® architecture platforms. Split voltage supply signaling provides 2.5V and 3.3V clock frequencies operating up to 133 MHz. From a low-cost 14.31818-MHz reference crystal oscillator

文件：135.61 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

文件：243.26 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

文件：110.22 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 900V-0.40ohm-15A TO-247 Zener-Protected SuperMESH MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak en to ensure a very good dv/dt capability for the most demanding applications. Such

文件：208.52 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

440BX AGPset Spread Spectrum Frequency Synthesizer

文件：175.57 Kbytes 页数：15 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

440BX AGPset Spread Spectrum Frequency Synthesizer

文件：175.57 Kbytes 页数：15 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

440BX AGPset Spread Spectrum Frequency Synthesizer

文件：175.57 Kbytes 页数：15 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司