BZT52C2V7S

Marking：W1；Package：SOD-323；PLASTIC-ENCAPSULATE ZENER DIODE

VOLTAGE2.0~75VoltsPOWER200.0mW FEATURES •LowZenerImpedance •PowerDissipationof200mW •HighStabilityandHighReliability •ZenerVoltageTolerance:±5 MECHANICALDATA •Case:SOD-123SmallOutlinePlasticPackage •EpoxyUL:94V-0 •Polarity:Colorbanddenotescathodeend

BZX584C2V4

Marking：W1；Package：SOD-523；200mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 200mWPowerDissipation 2.0V–51VNominalZenerVoltage 5%StandardVzTolerance DesignforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZX84B2V4

Marking：W1；Package：SOT-23；350mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 350mWPowerDissipation 2.4V–51VNominalZenerVoltage 2StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZX84C2V4

Marking：W1；Package：SOT-23；350mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 350mWPowerDissipation 2.4V–51VNominalZenerVoltage 5%StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZX84C2V4-AU

Marking：W1；Package：SOT-23；SURFACE MOUNT SILICON ZENER DIODES

SURFACEMOUNTSILICONZENERDIODES VOLTAGE2.4to75VoltsPOWER410mWatts FEATURES •PlanarDieconstruction •410mWPowerDissipation •ZenerVoltagesfrom2.4~75V •IdeallySuitedforAutomatedAssemblyProcesses •Acqirequalitysystemcertificate:TS16949 •AEC-Q10

BZX84C2V4W

Marking：W1；Package：SOT-323；200mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 200mWPowerDissipation 2.4V–51VNominalZenerVoltage 5%StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

ESD3.3V55T-4L

Marking：W1；Package：SOT-553；Transient Voltage Suppressors for ESD Protection

Feature 20WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsFourI/OLines(Unidirectional) Lowclampingvoltage WorkingVoltage:3.3V,5.0V,12V Lowleakagecurrent IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) Applications CellularHandsetsandAc

ISL9016AIRUJCZ-T

Marking：W1；Package：UTDFN；150mA Dual LDO with Low Noise, High PSRR and Low IQ

Features •Dualintegrated150mAhighperformanceLDOs •HighPSRR:80dBat1kHzand45dBat1MHz •Reversecurrentprotection •Lowquiescentcurrent -49μA(singleLDOenabled)/80μA(dualLDOsenabled) •Excellentloadtransientresponse •Typically±0.8outputvoltageaccuracy •Lowout

MM1Z5223B

Marking：W1；Package：SOD-123；SILICON PLANAR ZENER DIODES

Features •Totalpowerdissipation:Max.500mW •Smallplasticpackagesuitablefor surfacemounteddesign •Toleranceapproximately±5%

MMSZ2V7

Marking：W1；Package：SOD-123；SILICON PLANAR ZENER DIODES

Features •Totalpowerdissipation:Max.500mW •Smallplasticpackagesuitablefor surfacemounteddesign •Toleranceapproximately±5%