Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：132.59 Kbytes 页数：5 Pages

VishayVishay Siliconix

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Package：TO-220-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：40A,120V,TRENCH SCHOTTKY RECT.

Vishay General Semiconductor - Diodes Division

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.44 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3

文件：132.59 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Trench MOS Schottky technology

文件：94.97 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：88.76 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Trench MOS Schottky technology

文件：89.69 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技