型号：74LVC1GX04GV；Package：SOT457；X-tal driver

1. General description The 74LVC1GX04 is a crystal driver. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise

文件：247.81 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：74LVC1GX04GV-Q100；Package：SC-74；X-tal driver

文件：824.3 Kbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：VX4045CHM3SLASHP；Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3

文件：118.36 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

型号：VX4045C-M3SLASHP；Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3

文件：118.36 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

型号：VX4060CHM3SLASHP；Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3

文件：127.06 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

型号：VX4060C-M3SLASHP；Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3

文件：127.06 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

型号：VX40M100CHM3SLASHP；Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.41 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3

文件：127.93 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

型号：VX40M100C-M3SLASHP；Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.41 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3

文件：127.93 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

型号：VX40M120CHM3SLASHP；Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.44 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3

文件：132.59 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

型号：VX40M120C-M3SLASHP；Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.44 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3

文件：132.59 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技威世科技半导体