Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS   For use in high frequency c

文件：129.74 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件：81.7 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件：80.03 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS   For use in high frequency c

文件：129.74 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司