Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：149 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A

• Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and

文件：159.09 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：159.09 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：138.14 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Package：TO-220-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 200V 5A TO220AB

Vishay General Semiconductor - Diodes Division