MOSFET

N沟道增强型功率MOSFET采用VitoMOSⅡ技术制造，具有更低的导通损耗和开关损耗以及优越的开关性能。该产品可广泛应用于快充、马达驱动等领域。 1.VitoMOSⅡ 技术\n2.极低的Qg\n3.更低的导通损耗和开关损耗\n4.100%雪崩测试\n5.无铅电镀；符合 RoHS 标准;

Vergiga

威兆半导体

MOSFET - Power, Single N-Channel 100 V, 7 m, 83 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFR Free, Beryllium Free a

文件：330.47 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 100 V, 7 m, 83 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFR Free, Beryllium Free a

文件：330.47 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

VIT

VIT

上传：深圳市卓越微芯电子有限公司

VISHAY/威世
DO-214AC

VISHAY/威世

上传：深圳市星宇佳科技有限公司