MOSFET

N沟道增强型功率MOSFET采用VitoMOSⅡ技术制造，具有更低的导通损耗和开关损耗以及优越的开关性能。该产品可广泛应用于快充等领域。 1.VitoMOSⅡ 技术\n2.极低的Qg\n3.更低的导通损耗和开关损耗\n4.100%雪崩测试\n5.无铅电镀；符合 RoHS 标准;

Vergiga

威兆半导体

N-Channel MOSFET uses advanced trench technology

文件：1.51887 Mbytes 页数：5 Pages

DOINGTER

杜因特

MOSFET - Power, Single N-Channel 100 V, 13.6 m, 52 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：307.73 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 100 V, 13.6 m, 52 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：307.73 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

N-Channel MOSFET uses advanced SGT technology

文件：1.64761 Mbytes 页数：5 Pages

DOINGTER

杜因特