MOSFET

N沟道增强型功率MOSFET采用Trench工艺针对更低Rds(on)和更高载流能力进行优化。该类产品非常适合要求高性能和耐用性的中低频应用，如快充和开关电源等。 1.较低的导通损耗和开关损耗\n2.雪崩能力强\n3.100%雪崩测试;

Vergiga

威兆半导体

N-Channel Enhancement Mode MOSFET

Feature Pin Description  80V/420A RDS(ON)=0.9 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) Applications  Switching application  Power management for inverter systems  Battery management

文件：604.36 Kbytes 页数：9 Pages

HUAYI

华羿微电

75V Single N-Channel MOSFET

文件：887.26 Kbytes 页数：8 Pages

PFC

节能元件

75V Single N-Channel MOSFET

文件：866.82 Kbytes 页数：8 Pages

PFC

节能元件