MOSFET

N沟道增强型功率MOSFET采用VitoMOSⅡ技术制造，具有更低的导通损耗和开关损耗以及优越的开关性能。该产品可广泛应用于快充等领域。 1.VitoMOSⅡ 技术\n2.100% 雪崩测试\n3.更低的导通损耗和开关损耗\n4..无铅电镀；符合 RoHS 标准;无卤素;

Vergiga

威兆半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT007N04TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：742.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

MOSFET ??Power, Single N-Channel 40 V, 8.6 m, 49 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：333.12 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 7.3 m, 54 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：330.96 Kbytes 页数：7 Pages

ONSEMI

安森美半导体