MOSFET

P沟道增强型功率MOSFET采用Trench工艺针对更低Rds(on)和更高载流能力进行优化。该类产品非常适合要求高性能和耐用性的中低频应用，如马达驱动和负载开关等。 1.较低的导通损耗和开关损耗\n2.雪崩能力强\n3.100%雪崩测试;

Vergiga

威兆半导体

P-Channel MOSFET uses advanced trench technology

文件：1.71678 Mbytes 页数：5 Pages

DOINGTER

杜因特

Single Phase Bridge Rectifier, 25 A, 35 A

FEATURES • Universal, 3 way terminals: push-on, wrap around or solder • High thermal conductivity package, electrically insulated case • Positive polarity symbol molded on the plastic case • Center hole fixing • Glass passivated diode chips • Excellent power/volume ratio • Nickel plated t

文件：166.64 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Single Phase Bridge Rectifier, 25 A, 35 A

FEATURES • Universal, 3 way terminals: push-on, wrap around or solder • High thermal conductivity package, electrically insulated case • Positive polarity symbol molded on the plastic case • Center hole fixing • Glass passivated diode chips • Excellent power/volume ratio • Nickel plated t

文件：166.64 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司