MOSFET

P沟道增强型功率MOSFET采用Trench工艺针对更低Rds(on)和更高载流能力进行优化。该类产品非常适合要求高性能和耐用性的中低频应用，如马达驱动和负载开关等。 1.较低的导通损耗和开关损耗\n2.雪崩能力强\n3.100%雪崩测试\n4.无铅电镀；符合 RoHS 标准;

Vergiga

威兆半导体

MOSFET

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Vergiga

威兆半导体

Single Phase Bridge Rectifier, 25 A, 35 A

FEATURES • Universal, 3 way terminals: push-on, wrap around or solder • High thermal conductivity package, electrically insulated case • Positive polarity symbol molded on the plastic case • Center hole fixing • Glass passivated diode chips • Excellent power/volume ratio • Nickel plated t

文件：166.64 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Single Phase Bridge Rectifier, 25 A, 35 A

FEATURES • Universal, 3 way terminals: push-on, wrap around or solder • High thermal conductivity package, electrically insulated case • Positive polarity symbol molded on the plastic case • Center hole fixing • Glass passivated diode chips • Excellent power/volume ratio • Nickel plated t

文件：166.64 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Rating at 25??Ambient temp. Unless otherwise specified. Single phase, half sine wave, 60HZ,resistive or inductive load.

文件：518.96 Kbytes 页数：2 Pages

GXELECTRONICS

星合电子