Dual INT-A-PAK Low Profile ?쏦alf Bridge??(Trench PT IGBT), 300 A

FEATURES • Trench PT IGBT technology • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • Material categorization: for definitions of

文件：168.93 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench PT IGBT technology

文件：180.46 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual INT-A-PAK Low Profile ?쏦alf Bridge??(Trench PT IGBT), 300 A

FEATURES • Trench PT IGBT technology • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • Material categorization: for definitions of

文件：168.93 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual INT-A-PAK Low Profile \Half Bridge\ (Standard Speed IGBT), 300 A

·Trench PT IGBT technology\n·Low VCE(on)\n·Square RBSOA;

Vishay

威世

Package：双 INT-A-PAK（3 + 8）；包装：托盘托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MOD 600V 580A INT-A-PAK

Vishay General Semiconductor - Diodes Division