650 V Power SiC Merged PIN Schottky Diode, 2 x 20 A

FEATURES • Majority carrier diode using Schottky technology on SiC wide band gap material • Positive VF temperature coefficient, for easy paralleling • Virtually no recovery tail and no switching losses • Temperature invariant switching behavior • 175 °C maximum operating junction temperatu

文件：138.17 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

650 V Power SiC Merged PIN Schottky Diode, 2 x 20 A

文件：137.53 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

650 V Power SiC Merged PIN Schottky Diode, 2 x 20 A

Vishay

威世

Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 20A TO220AC

Vishay General Semiconductor - Diodes Division

650 V Power SiC Merged PIN Schottky Diode, 2 x 20 A

FEATURES • Majority carrier diode using Schottky technology on SiC wide band gap material • Positive VF temperature coefficient, for easy paralleling • Virtually no recovery tail and no switching losses • Temperature invariant switching behavior • 175 °C maximum operating junction temperatu

文件：138.17 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司