650 V Power SiC Gen 3 Merged PIN Schottky Diode, 2 x 10 A

Majority carrier diode using Schottky technology on SiC wide band gap material\nImproved VF and efficiency by thin wafer technology\nPositive VF temperature coefficient, for easy paralleling;

Vishay

威世

650 V Power SiC Gen 3 Merged PIN Schottky Diode, 2 x 10 A

FEATURES • Majority carrier diode using Schottky technology on SiC wide band gap material • Improved VF and efficiency by thin wafer technology • Positive VF temperature coefficient, for easy paralleling • Virtually no recovery tail and no switching losses • Temperature invariant switching

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VishayVishay Siliconix

威世威世科技公司

包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 10A TO220AC

Vishay General Semiconductor - Diodes Division

TO-247AC

VishayVishay Siliconix

威世威世科技公司

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Module

Vishay Semiconductors

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