Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A

FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 • Material categorization: for definitions of compliance please see www.vishay.com/doc?999

文件：129.949 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：DO-203AA，DO-4，接线柱；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 700V 12A DO203AA

Vishay General Semiconductor - Diodes Division

Package：DO-203AA，DO-4，接线柱；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 700V 12A DO203AA

Vishay General Semiconductor - Diodes Division

SILICON POWER RECTIFIER

Silicon Power Rectifier • Glass Passivated Die • Low Forward Voltage • 400A Surge Rating • Glass to metal seal construction • VRRM to 1600V • Excellent reliability

文件：137.95 Kbytes 页数：2 Pages

MICROSEMI

美高森美