丝印：VP32；Package：SOIC(D)；SN65HVD3x 3.3-V Full-Duplex RS-485 Drivers and Receivers

1 Features • 1/8 Unit-load option available (up to 256 nodes on the bus) • Bus-pin ESD protection exceeds 15-kV HBM • Optional driver output transition times for signaling rates of 1 Mbps, 5 Mbps and 26 Mbps – Line signaling rate is the number of voltage transitions made per second expresse

文件：2.11063 Mbytes 页数：46 Pages

TI

德州仪器

丝印：VP32；Package：SOIC(D)；SN65HVD3x 3.3-V Full-Duplex RS-485 Drivers and Receivers

1 Features • 1/8 Unit-load option available (up to 256 nodes on the bus) • Bus-pin ESD protection exceeds 15-kV HBM • Optional driver output transition times for signaling rates of 1 Mbps, 5 Mbps and 26 Mbps – Line signaling rate is the number of voltage transitions made per second expresse

文件：2.11063 Mbytes 页数：46 Pages

TI

德州仪器

丝印：VP32；Package：SOIC(D)；SN65HVD3x 3.3-V Full-Duplex RS-485 Drivers and Receivers

1 Features • 1/8 Unit-load option available (up to 256 nodes on the bus) • Bus-pin ESD protection exceeds 15-kV HBM • Optional driver output transition times for signaling rates of 1 Mbps, 5 Mbps and 26 Mbps – Line signaling rate is the number of voltage transitions made per second expresse

文件：2.11063 Mbytes 页数：46 Pages

TI

德州仪器

丝印：VP32；Package：SOIC(D)；SN65HVD3x 3.3-V Full-Duplex RS-485 Drivers and Receivers

1 Features • 1/8 Unit-load option available (up to 256 nodes on the bus) • Bus-pin ESD protection exceeds 15-kV HBM • Optional driver output transition times for signaling rates of 1 Mbps, 5 Mbps and 26 Mbps – Line signaling rate is the number of voltage transitions made per second expresse

文件：2.11063 Mbytes 页数：46 Pages

TI

德州仪器

P-Channel Enhancement-Mode Vertical DMOS FETs

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperatur

文件：458.93 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperatur

文件：458.93 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperatur

文件：458.93 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperatur

文件：458.93 Kbytes 页数：4 Pages

SUTEX

10/100 BASE-TX VOICE OVER IP MAGNETICS

文件：259.8 Kbytes 页数：1 Pages

BOTHHAND

P-Channel Enhancement-Mode Vertical DMOS FET

文件：608.46 Kbytes 页数：6 Pages

SUTEX