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FRM234

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FRM234D

7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRM234H

7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRM234R

7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRS234D

5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRS234H

5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRS234R

5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSL234D

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSL234R

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSPYE234F

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSPYE234R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS234

DC/DCConverterApplications

Features •LowON-resistance. •4.0Vdrive. •Ultrahigh-speedswitching.

SANYOSanyo

三洋三洋电机株式会社

FSS234D

6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS234R

6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FT234XD

SinglechipUSBtoasynchronousserialdatatransferinterface

FTDIFuture Technology Devices International Ltd

FTDIFuture Technology Devices International Ltd

FT234XD

TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures

FTDIFuture Technology Devices International Ltd

FTDIFuture Technology Devices International Ltd

FT234XDR

TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures

FTDIFuture Technology Devices International Ltd

FTDIFuture Technology Devices International Ltd

FT234XD-R

USBtoBASICUARTIC

FTDIFuture Technology Devices International Ltd

FTDIFuture Technology Devices International Ltd

FT234XD-X

TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures

FTDIFuture Technology Devices International Ltd

FTDIFuture Technology Devices International Ltd

FX234

VSBAudioScrambler

CMLMICROCML Microcircuits

CML公司

供应商型号品牌批号封装库存备注价格
15+
SOP8
6678
现货-ROHO
询价
TI
23+
SOP8
7750
全新原装优势
询价
TI
1904+
SOP8
2000
自家现货!原装特价供货!一片起卖!
询价
TI/德州仪器
20+
SOP-8
5500
代理库存,房间现货,有挂就是现货
询价
TI
2023+
SOP8
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
TI
21+
SOP8
35400
全新原装现货/假一罚百!
询价
RAFAEL
23+
QFN
69820
终端可以免费供样,支持BOM配单!
询价
TI/德州仪器
21+
SOP-8
80000
只做正品原装现货
询价
TI
21+
SOP-8
39890
全新原装现货,假一赔十
询价
TI/德州仪器
21+
SOP-8
2000
百域芯优势 实单必成 可开13点增值税发票
询价
更多VP234供应商 更新时间2024-5-28 15:00:00