P-Channel Enhancement-Mode Vertical DMOS FET

General Description The VP0808 Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and posi

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MICROCHIP

微芯科技

P-Channel Enhancement-Mode P-Channel Enhancement-Mode

General Description The Supertex VP0808 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi

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SUTEX

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low On-Resistance: 2.5 Ω ● Moderate Threshold: –3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-Voltage Operation ● High-Speed Switching ● Easily Driven Without Buf

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ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel Enhancement-Mode D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] FEATURES ■ Gate Stand-off Voltage, ±40V min. ■ Low Output and Transfer Capacitances ■ N-Channel Complements Available APPLICATIONS ■ Motor Controls ■ Logic Interface ■ Pulse Amplifiers

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ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low Cm-Resistance: 2.5 Q ● Moderate Threshold: -3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-VoltageOperation ● High-Speed Switching ● Easily Driven Without Buff

文件：93.68 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司