OMNIFET: fully autoprotected Power MOSFET

DESCRIPTION The VNP49N04FI, VNB49N04, VNV49N04 are monolithic devices designed in STMicroelectronics VIPower M0 Technology, intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the c

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STMICROELECTRONICS

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OMNIFET: fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po

文件：390.71 Kbytes 页数：22 Pages

STMICROELECTRONICS

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?쏰MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

文件：133.04 Kbytes 页数：14 Pages

STMICROELECTRONICS

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MOSFET POWER 42V 49A PWRSO10

ST

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Package：PowerSO-10 裸露底部焊盘；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICS

意法半导体

OMNIFET: fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po

文件：390.71 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

MOSFET OMNIFET 42V 49A POWERSO10

ST

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICS

意法半导体