Omnifet II fully autoprotected Power MOSFET

Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the Power MOSFET (analog driving) • Compatible with standard Po

文件：479.26 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Omnifet II fully autoprotected Power MOSFET

Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the Power MOSFET (analog driving) • Compatible with standard Po

文件：479.26 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Omnifet II fully autoprotected Power MOSFET

Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the Power MOSFET (analog driving) • Compatible with standard Po

文件：479.26 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II全自动保护功率MOSFET

The VNP8T is a monolithic device designed in STMicroelectronics®VIPower®M0-3 technology, intended for the replacement of standard Power MOSFETs from DC up to 50 kHz applications.\n\n Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.\n\ • Linear current limitation \n• Short circuit protection \n• Low current drawn from input pin \n• ESD protection \n• Compatible with standard Power MOSFETs;

ST

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