isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 70V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNP20N07 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh

文件：136.78 Kbytes 页数：11 Pages

STMICROELECTRONICS

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OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

文件：374.75 Kbytes 页数：11 Pages

STMICROELECTRONICS

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OMNIFET：全自动保护功率MOSFET

The VNP20N07 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications.\n\n Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.\n\n Fault feed • STANDARD TO-220 PACKAGE \n• COMPATIBLE WITH STANDARD POWER MOSFET \n• ESD PROTECTION \n• DIAGNOSTIC FEEDBACK THROUGH INPUT PIN \n• LINEAR CURRENT LIMITATION \n• SHORT CIRCUIT PROTECTION \n• THERMAL SHUT DOWN \n• LOW CURRENT DRAWN FROM INPUT PIN \n• DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (AN;

ST

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Package：TO-220-3；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 TO220AB

STMICROELECTRONICS

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?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNP20N07FI, VNB20N07 and VNV20N07 are monolithic devices made using STMicroelectronics VlPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the

文件：153.12 Kbytes 页数：13 Pages

STMICROELECTRONICS

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OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

文件：374.75 Kbytes 页数：11 Pages

STMICROELECTRONICS

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OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

文件：491.98 Kbytes 页数：13 Pages

STMICROELECTRONICS

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FULLY AUTOPROTECTED POWER MOSFET

文件：422.87 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 TO220AB

STMICROELECTRONICS

意法半导体