OMNIFET III fully protected low-side driver for automotive applications

Features  AEC-Q100 qualified  Drain current: 2 A  ESD protection  Overvoltage clamp  Thermal shutdown  Current and power limitation  Very low standby current  Very low electromagnetic susceptibility  Compliant with European directive 2002/95/EC

文件：1.99498 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

OMNIFET III fully protected low-side driver

文件：395.95 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

OMNIFET III fully protected low-side driver for automotive applications

Features  AEC-Q100 qualified  Drain current: 2 A  ESD protection  Overvoltage clamp  Thermal shutdown  Current and power limitation  Very low standby current  Very low electromagnetic susceptibility  Compliant with European directive 2002/95/EC

文件：1.99498 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

OMNIFET III全保护下桥臂驱动器

The VNLD5300-E is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the • AEC-Q100 qualified \n• Drain current: 2 A \n• ESD protection \n• Overvoltage clamp \n• Thermal shutdown \n• Current and power limitation \n• Very low standby current \n• Very low electromagnetic susceptibility \n• Compliant with European directive 2002/95/EC;

ST

意法半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 8SOIC

STMICROELECTRONICS

意法半导体