OMNIFET III fully protected low-side driver for automotive applications

Features  AEC-Q100 qualified  Drain current: 13 A  ESD protection  Overvoltage clamp  Thermal shutdown  Current and power limitation  Very low standby current  Very low electromagnetic susceptibility  In compliance with the 2002/95/EC European directive

文件：542.78 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

OMNIFET III fully protected low-side driver

文件：423.99 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

OMNIFET III fully protected low-side driver for automotive applications

Features  AEC-Q100 qualified  Drain current: 13 A  ESD protection  Overvoltage clamp  Thermal shutdown  Current and power limitation  Very low standby current  Very low electromagnetic susceptibility  In compliance with the 2002/95/EC European directive

文件：542.78 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

OMNIFET III全保护下桥臂驱动器

The VNLD5090-E is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the • AEC-Q100 qualified \n• Drain current: 13 A \n• ESD protection \n• Overvoltage clamp \n• Thermal shutdown \n• Current and power limitation \n• Very low standby current \n• Very low electromagnetic susceptibility \n• In compliance with the 2002/95/EC European directive;

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意法半导体