OMNIFET III fully protected low-side driver

Features • Automotive qualified • Drain current: 3.5A • ESD protection • Overvoltage clamp • Thermal shutdown • Current and power limitation • Very low standby current • Very low electromagnetic susceptibility • In compliance with the 2002/95/EC European directive • Open drain status ou

文件：542.58 Kbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体

OMNIFET III fully protected low-side driver

文件：502.78 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

单通道低侧智能电源开关

The VNL5160N3-E and VNL5160S5-E are monolithic devices, made using STMicroelectronics®VIPower®Technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short circuit. Output current limit • Automotive qualified \n• Drain current:3.5A \n• ESD protection \n• Overvoltage clamp \n• Thermal shutdown \n• Current and power limitation• Very low standby current \n• Very low electromagnetic susceptibility \n• In compliance with the 2002/95/EC European directive \n• Open drain status output (VN;

ST

意法半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC SW LOW SIDE 1CH 5A 8SOIC

STMICROELECTRONICS

意法半导体